EBE51RC4AAFA
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
Minimum row precharge time (tRP)
27
0
0
0
0
1
0
1
0
0
1
1
1
1
0
1
1
0
1
0
0
1
0
0
0
3CH
50H
1EH
15ns
20ns
7.5ns
-5C, -4A
-4C
Minimum row active to row active
delay (tRRD)
28
29
Minimum /RAS to /CAS delay (tRCD)
-5C, -4A
0
0
0
1
0
1
0
0
1
0
1
0
1
1
0
0
1
0
1
0
1
0
1
0
0
0
0
0
0
0
1
0
3CH
50H
2DH
80H
15ns
-4C
20ns
Minimum active to precharge time
(tRAS)
30
31
45ns
Module rank density
512MB
Address and command setup time
before clock (tIS)
-5C
32
0
0
0
0
0
0
0
0
1
0
1
1
1
0
0
0
1
1
0
1
0
0
1
1
0
1
1
0
0
0
0
0
0
0
0
1
1
0
0
0
25H
35H
38H
48H
10H
0.25ns*1
0.35ns*1
0.38ns*1
0.48ns*1
0.10ns*1
-4A, -4C
Address and command hold time after
clock (tIH)
-5C
33
-4A, -4C
Data input setup time before clock
(tDS)
-5C
34
35
-4A, -4C
0
0
0
0
0
1
1
0
0
0
1
0
0
1
1
1
15H
23H
0.15ns*1
0.23ns*1
Data input hold time after clock (tDH)
-5C
-4A, -4C
0
0
0
0
1
1
0
1
1
1
0
1
0
0
0
0
28H
3CH
0.28ns*1
15ns*1
36
37
Write recovery time (tWR)
Internal write to read command delay
(tWTR)
-5C
0
0
0
1
1
1
1
0
1EH
7.5ns*1
-4A, -4C
0
0
0
0
1
0
0
1
1
1
0
1
0
1
0
0
28H
1EH
10ns*1
7.5ns*1
Internal read to precharge command
delay (tRTP)
38
39
40
Memory analysis probe characteristics 0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
00H
00H
TBD
Extension of Byte 41 and 42
0
0
0
0
1
0
0
0
Undefined
Active command period (tRC)
-5C, -4A,
41
0
1
1
0
0
0
0
1
0
0
0
0
1
1
1
0
0
0
1
0
0
1
0
1
0
1
0
1
1
0
0
0
1
0
0
0
0
1
0
1
1
0
0
1
1
0
0
1
0
3CH
41H
4BH
80H
1EH
23H
28H
60ns*1
65ns*1
75ns*1
8ns*1
-4C
Auto refresh to active/
42
43
44
Auto refresh command cycle (tRFC)
SDRAM tCK cycle max. (tCK max.)
Dout to DQS skew
-5C
0.30ns*1
0.35ns*1
0.40ns*1
-4A, -4C
Data hold skew (tQHS)
-5C
45
-4A, -4C
0
0
0
0
0
0
1
0
0
0
0
0
1
1
0
1
1
0
0
1
0
1
1
0
2DH
0FH
00H
0.45ns*1
46
PLL relock time
15µs
47 to 61
Preliminary Data Sheet E0471E11 (Ver. 1.1)
6
ELPIDA [ ELPIDA MEMORY ]
