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EBE41AF4A1QB-6E-E 参数 Datasheet PDF下载

EBE41AF4A1QB-6E-E图片预览
型号: EBE41AF4A1QB-6E-E
PDF下载: 下载PDF文件 查看货源
内容描述: 4GB的VLP注册DDR2 SDRAM DIMM [4GB VLP Registered DDR2 SDRAM DIMM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 27 页 / 231 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE41AF4A1QB  
Differential Clock Net Wiring (CK0, /CK0)  
0ns (nominal)  
SDRAM  
stack  
PLL  
120Ω  
OUT1  
SDRAM  
stack  
120Ω  
CK0  
IN  
Register 1  
/CK0  
120Ω  
OUT'N'  
C
120Ω  
Feedback in  
C
Feedback out  
Register 2  
Notes: 1. The clock delay from the input of the PLL clock to the input of any SDRAM or register willl  
be set to 0ns (nominal).  
2. Input, output and feedback clock lines are terminated from line to line as shown, and not  
from line to ground.  
3. Only one PLL output is shown per output type. Any additional PLL outputs will be wired  
in a similar manner.  
4. Termination resistors for the PLL feedback path clocks are located as close to the  
input pin of the PLL as possible.  
Preliminary Data Sheet E1246E10 (Ver. 1.0)  
9