EBE21UE8ABFA
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
Minimum row precharge time (tRP)
-8E
27
0
0
0
0
0
0
1
1
0
1
1
1
0
1
1
0
1
1
1
0
1
0
0
0
32H
3CH
1EH
12.5ns
15ns
-6E, -5C, -4A
Minimum row active to row active
delay (tRRD)
28
29
7.5ns
Minimum /RAS to /CAS delay (tRCD)
-8E
0
0
0
0
1
1
1
1
0
1
0
1
1
0
0
0
32H
3CH
12.5ns
15ns
-6E, -5C, -4A
Minimum active to precharge time
(tRAS)
30
0
0
1
0
1
1
0
1
2DH
45ns
-8E, -6E, -5C
-4A
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
1
28H
01H
40ns
31
32
Module rank density
1G bytes
Address and command setup time
before clock (tIS)
-8E
0
0
0
1
0
1
1
1
17H
0.17ns*1
-6E
-5C
-4A
0
0
0
0
0
0
1
1
1
0
0
1
0
0
0
0
1
1
0
0
0
0
1
1
20H
25H
35H
0.20ns*1
0.25ns*1
0.35ns*1
Address and command hold time
after clock (tIH)
-8E
33
0
0
1
0
0
1
0
1
25H
0.25ns*1
-6E
-5C
-4A
0
0
0
0
0
1
1
1
0
0
1
0
0
0
0
1
1
1
1
1
1
1
1
1
27H
37H
47H
0.27ns*1
0.37ns*1
0.47ns*1
Data input setup time before clock
(tDS)
-8E
34
35
0
0
0
0
0
1
0
1
05H
0.05ns*1
-6E, -5C
-4A
0
0
0
0
0
0
1
1
0
0
0
1
0
0
0
1
10H
15H
0.10ns*1
0.15ns*1
Data input hold time after clock (tDH)
-8E
0
0
0
1
0
0
1
0
12H
0.12ns*1
-6E
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
1
0
0
0
1
1
0
1
1
1
1
1
0
1
0
1
0
17H
22H
27H
3CH
0.17ns*1
0.22ns*1
0.27ns*1
15ns*1
-5C
-4A
36
37
Write recovery time (tWR)
Internal write to read command delay
(tWTR)
0
0
0
1
1
1
1
0
1EH
7.5ns*1
-8E, -6E, -5C
-4A
0
0
0
0
1
0
0
1
1
1
0
1
0
1
0
0
28H
1EH
10ns*1
7.5ns*1
Internal read to precharge command
delay (tRTP)
38
39
40
Memory analysis probe
characteristics
0
0
0
0
0
0
0
0
00H
TBD
Extension of Byte 41 and 42
-8E
0
0
0
0
0
0
1
0
1
1
0
1
0
0
1
1
1
0
1
1
0
0
0
1
36H
06H
39H
-6E, -5C, -4A
Active command period (tRC)
-8E
41
57.5ns*1
-6E, -5C
-4A
0
0
0
0
1
1
1
1
1
0
1
1
0
1
0
1
3CH
37H
60ns*1
55ns*1
Preliminary Data Sheet E0906E10 (Ver. 1.0)
6
ELPIDA [ ELPIDA MEMORY ]
