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EBE20RE4AAFA 参数 Datasheet PDF下载

EBE20RE4AAFA图片预览
型号: EBE20RE4AAFA
PDF下载: 下载PDF文件 查看货源
内容描述: 注册2GB DDR2 SDRAM DIMM ( 256M字× 72位,1个等级) [2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 1 Rank)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 22 页 / 187 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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DATA SHEET
2GB Registered DDR2 SDRAM DIMM
EBE20RE4AAFA
(256M words
×
72 bits, 1 Rank)
Description
The EBE20RE4AAFA is a 256M words
×
72 bits, 1
rank DDR2 SDRAM Module, mounting 18 pieces of
DDR2 SDRAM sealed in FBGA (µBGA
) package.
Read and write operations are performed at the cross
points of the CK and the /CK. This high-speed data
transfer is realized by the 4bits prefetch-pipelined
architecture. Data strobe (DQS and /DQS) both for
read and write are available for high speed and reliable
data bus design. By setting extended mode register,
the on-chip Delay Locked Loop (DLL) can be set
enable or disable. This module provides high density
mounting without utilizing surface mount technology.
Decoupling capacitors are mounted beside each FBGA
(µBGA) on the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
240-pin socket type dual in line memory module
(DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free
Power supply: VDD, VDDQ
=
1.8V
±
0.1V
Data rate: 533Mbps/400Mbps (max.)
SSTL_18 compatible I/O
Double-data-rate architecture: two data transfers per
clock cycle
Bi-directional, data strobe (DQS and /DQS) is
transmitted /received with data, to be used in
capturing data at the receiver
DQS is edge aligned with data for READs; center
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
referenced to both edges of DQS
Eight internal banks for concurrent operation
(Component)
Burst length: 4, 8
/CAS latency (CL): 3, 4, 5
Auto precharge option for each burst access
Auto refresh and self refresh modes
Average refresh period
7.8µs at 0°C
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
/DQS can be disabled for single-ended Data Strobe
operation
1 piece of PLL clock driver, 2 pieces of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)
Document No. E0440E30 (Ver. 3.0)
Date Published March 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2003-2005