EBE11FD8AHFT, EBE11FD8AHFE, EBE11FD8AHFL
Ordering Information
DIMM speed
grade
Component JEDEC
speed bin (CL-tRCD-tRP)
Part number
Mounted devices*1
Mounted AMB*2
IDT Rev. C1
EBE11FD8AHFT-6E-E
PC2-5300F
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
EDE5108AHSE-6E-E
EDE5108AHSE-6E-E
EDE5108AHSE-5C-E
EBE11FD8AHFT-5C-E
EBE11FD8AHFE-6E-E
EBE11FD8AHFE-5C-E
EBE11FD8AHFL-6E-E
EBE11FD8AHFL-5C-E
PC2-4200F
PC2-5300F
PC2-4200F
PC2-5300F
PC2-4200F
EDE5108AHSE-6E-E
NECEL Rev. B5+
INTEL Rev. D1
EDE5108AHSE-6E-E
EDE5108AHSE-5C-E
EDE5108AHSE-6E-E
EDE5108AHSE-6E-E
EDE5108AHSE-5C-E
Notes: 1. Please refer to the EDE5108AHSE, EDE5116AHSE datasheet (E0908E) for detailed operation part and
timing waveforms.
2. Please refer to the following documents for detailed operation part and timing waveforms.
Advanced Memory Buffer (AMB) specification
FB-DIMM Architecture and Protocol specification
Part Number
E B E 11 F D 8 A H F T - 6E - E
Environment code
Elpida Memory
Type
E: Lead Free
(RoHS compliant)
B: Module
DRAM Speed Grade
Product Family
E: DDR2
6E: DDR2-667 (5-5-5)
5C: DDR2-533 (4-4-4)
Density / Rank
11: 1GB/2-rank
AMB Device Information
T: IDT, Rev.C1
E: NECEL, Rev.B5+
L: Intel, Rev.D1
Module Type
F: Fully Buffered
Module Outline
Mono Density
D: 512Mbit
F: 240-pin DIMM
Die Rev. (Mono)
Mono Organization
8: x8
Power Supply, Interface
A: 1.8V, SSTL_1.8
Preliminary Data Sheet E1000E30 (Ver. 3.0)
2
ELPIDA [ ELPIDA MEMORY ]
