EBE11ED8ABFA
Serial PD Matrix
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
128 bytes
Number of bytes utilized by module
0
1
1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
80H
08H
manufacturer
Total number of bytes in serial PD
device
256 bytes
2
3
4
5
6
7
8
Memory type
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
1
1
1
0
1
0
0
0
1
0
0
0
0
1
0
1
1
0
0
0
0
0
0
0
1
0
0
1
08H
0EH
0AH
61H
48H
00H
05H
DDR2 SDRAM
Number of row address
Number of column address
Number of DIMM ranks
Module data width
14
10
2
72
Module data width continuation
0
Voltage interface level of this assembly 0
SSTL 1.8V
DDR SDRAM cycle time, CL = 5
9
0
0
1
1
1
0
0
1
1
1
1
0
0
1
0
0
0
0
0
1
0
0
3DH
50H
50H
3.75ns*1
5.0ns*1
0.5ns*1
-5C
-4A
0
0
SDRAM access from clock (tAC)
-5C
10
-4A
0
0
1
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
60H
02H
82H
08H
08H
00H
0.6ns*1
ECC
7.8µs
× 8
11
12
13
14
15
DIMM configuration type
Refresh rate/type
Primary SDRAM width
Error checking SDRAM width
Reserved
× 8
0
SDRAM device attributes:
Burst length supported
16
17
18
0
0
0
0
0
0
0
0
1
0
0
1
1
0
1
1
1
0
0
0
0
0
0
0
0CH
04H
38H
4,8
SDRAM device attributes: Number of
banks on SDRAM device
4
SDRAM device attributes:
/CAS latency
3, 4, 5
19
20
21
22
Reserved
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
00H
02H
00H
30H
0
DIMM type information
SDRAM module attributes
SDRAM device attributes: General
Unbuffered
Normal
VDD ± 0.1V
Minimum clock cycle time at CL = 4
-5C
23
0
0
0
1
1
0
1
1
1
0
1
0
0
0
1
0
3DH
50H
3.75ns*1
5.0ns*1
-4A
Maximum data access time (tAC) from
clock at CL = 4
-5C
24
0
1
0
1
0
0
0
0
50H
0.5ns*1
-4A
0
0
1
1
1
0
0
1
0
0
0
0
0
0
0
0
60H
50H
0.6ns*1
5.0ns*1
Minimum clock cycle time at CL = 3
-5C, -4A
25
26
27
Maximum data access time (tAC) from
clock at CL = 3
-5C, -4A
0
0
1
0
1
1
0
1
0
1
0
1
0
0
0
0
60H
3CH
0.6ns*1
15ns
Minimum row precharge time (tRP)
-5C, -4A
Data Sheet E0379E40 (Ver. 4.0)
5
ELPIDA [ ELPIDA MEMORY ]
