EBD52UC8AAFA
Electrical Specifications
• All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
VT
Value
Unit
Note
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
–0.5 to +3.6
–0.5 to +3.6
50
V
VDD
IOS
PD
V
mA
W
°C
°C
16
Operating ambient temperature
Storage temperature
TA
0 to +70
–40 to +100
1
Tstg
Notes: 1. DDR SDRAM component specification.
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Component Specification)
Parameter
Symbol
VDD,VDDQ
VSS
Min
Typ
2.5
0
Max
2.7
0
Unit
V
Notes
1
Supply voltage
2.3
0
V
Input reference voltage
Termination voltage
Input high voltage
Input low voltage
VREF
0.49 × VDDQ
VREF – 0.04
VREF + 0.15
–0.3
0.50 × VDDQ 0.51 × VDDQ
V
VTT
VREF
—
VREF + 0.04
VDDQ + 0.3
VREF – 0.15
V
VIH (DC)
VIL (DC)
V
2
3
—
V
Input voltage level,
VIN (DC)
VIX (DC)
VID (DC)
–0.3
—
VDDQ + 0.3
V
V
V
4
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
0.5 × VDDQ − 0.2V 0.5 × VDDQ
0.36
0.5 × VDDQ + 0.2V
VDDQ + 0.6
—
5, 6
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable DC execution of each differential input.
5. VID (DC) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
Data Sheet E0362E20 (Ver. 2.0)
9
ELPIDA [ ELPIDA MEMORY ]
