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EBD52EC8AAFA 参数 Datasheet PDF下载

EBD52EC8AAFA图片预览
型号: EBD52EC8AAFA
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB无缓冲DDR SDRAM DIMM [512MB Unbuffered DDR SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 18 页 / 181 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EBD52EC8AAFA的Datasheet PDF文件第1页浏览型号EBD52EC8AAFA的Datasheet PDF文件第2页浏览型号EBD52EC8AAFA的Datasheet PDF文件第3页浏览型号EBD52EC8AAFA的Datasheet PDF文件第4页浏览型号EBD52EC8AAFA的Datasheet PDF文件第6页浏览型号EBD52EC8AAFA的Datasheet PDF文件第7页浏览型号EBD52EC8AAFA的Datasheet PDF文件第8页浏览型号EBD52EC8AAFA的Datasheet PDF文件第9页  
EBD52EC8AAFA  
Serial PD Matrix  
Byte No. Function described  
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value  
Comments  
128 bytes  
Number of bytes utilized by module  
0
1
1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
80H  
08H  
manufacturer  
Total number of bytes in serial PD  
256 bytes  
device  
2
Memory type  
0
0
0
0
0
0
0
0
0
0
1
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
1
1
0
1
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
0
0
0
0
1
0
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
0
0
0
1
1
0
0
0
0
07H  
0DH  
0AH  
02H  
48H  
00H  
04H  
75H  
75H  
02H  
82H  
08H  
08H  
DDR SDRAM  
3
Number of row address  
Number of column address  
Number of DIMM ranks  
Module data width  
13  
4
10  
5
2
6
72 bits  
0
7
Module data width continuation  
8
Voltage interface level of this assembly 0  
SSTL2  
7.5ns  
0.75ns  
ECC  
7.6µs  
× 8  
9
DDR SDRAM cycle time, CL = 2.5  
SDRAM access from clock (tAC)  
DIMM configuration type  
Refresh rate/type  
0
0
0
1
0
0
10  
11  
12  
13  
14  
Primary SDRAM width  
Error checking SDRAM width  
× 8  
SDRAM device attributes:  
Minimum clock delay back-to-back  
column access  
15  
0
0
0
0
0
0
0
1
01H  
1 CLK  
SDRAM device attributes:  
16  
17  
18  
19  
20  
21  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
0
1
0
0
0
1
1
1
0
0
0
1
0
0
0
1
0
0
0
0
1
0
0
0EH  
04H  
0CH  
01H  
02H  
20H  
2,4,8  
Burst length supported  
SDRAM device attributes: Number of  
banks on SDRAM device  
SDRAM device attributes:  
/CAS latency  
SDRAM device attributes:  
/CS latency  
SDRAM device attributes:  
/WE latency  
4
2, 2.5  
0
1
Differential  
Clock  
SDRAM module attributes  
22  
23  
SDRAM device attributes: General  
Minimum clock cycle time at CL = 2  
1
1
1
0
0
1
0
0
0
0
0
0
0
0
0
0
C0H  
A0H  
VDD ± 0.2V  
10ns  
Maximum data access time (tAC) from  
clock at CL = 2  
24  
0
1
1
1
0
1
0
1
75H  
0.75ns  
25 to 26  
27  
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
00H  
50H  
Minimum row precharge time (tRP)  
20ns  
Minimum row active to row active  
delay (tRRD)  
Minimum /RAS to /CAS delay (tRCD)  
Minimum active to precharge time  
(tRAS)  
Module rank density  
28  
29  
30  
31  
32  
0
0
0
0
1
0
1
0
1
0
1
0
1
0
0
1
1
0
0
1
1
0
1
0
0
1
0
1
0
0
0
0
0
0
0
0
0
1
0
0
3CH  
50H  
2DH  
40H  
90H  
15ns  
20ns  
45ns  
256M bytes  
0.9ns*1  
Address and command setup time  
before clock (tIS)  
Address and command hold time after  
clock (tIH)  
33  
1
0
0
1
0
0
0
0
90H  
0.9ns*1  
Data Sheet E0363E20 (Ver. 2.0)  
5