欢迎访问ic37.com |
会员登录 免费注册
发布采购

EBD12UB8ALF-7A 参数 Datasheet PDF下载

EBD12UB8ALF-7A图片预览
型号: EBD12UB8ALF-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB无缓冲DDR SDRAM DIMM [128MB Unbuffered DDR SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 16 页 / 160 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第2页浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第3页浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第4页浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第5页浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第6页浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第7页浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第8页浏览型号EBD12UB8ALF-7A的Datasheet PDF文件第9页  
PRELIMINARY DATA SHEET
128MB Unbuffered DDR SDRAM DIMM
EBD12UB8ALF
(16M words
×
64 bits, 1 Bank)
Description
The EBD12UB8ALF is 16M words
×
64 bits, 1 bank
Double Data Rate (DDR) SDRAM unbuffered module,
mounted 8 pieces of 128M bits DDR SDRAM
(EDD1208ALTA) sealed in TSOP package. Read and
write operations are performed at the cross points of
the CLK and the /CLK. This high-speed data transfer
is realized by the 2 bits prefetch-pipelined architecture.
Data strobe (DQS) both for read and write are available
for high speed and reliable data bus design. By setting
extended mode register, the on-chip Delay Locked
Loop (DLL) can be set enable or disable. An outline of
the products is 184-pin socket type package (dual lead
out). Therefore, it makes high density mounting
possible without surface mount technology. It provides
common data inputs and outputs.
Decoupling
capacitors are mounted beside each TSOP on the
module board.
Features
184-pin socket type dual in line memory module
(DIMM)
Outline: 133.35mm (Length)
×
31.75mm (Height)
×
4.00mm (Thickness)
Lead pitch: 1.27mm
2.5V power supply (VDD/VDDQ)
SSTL-2 interface for all inputs and outputs
Clock frequency: 133MHz/100MHz (max.)
Data inputs and outputs are synchronized with DQS
4 banks can operate simultaneously and
independently (Component)
Burst read/write operation
Programmable burst length: 2, 4, 8
Burst read stop capability
Programmable burst sequence
Sequential
Interleave
Start addressing capability
Even and Odd
Programmable /CAS latency (CL): 2, 2.5
4096 refresh cycles: 15.6µs (4096/64ms)
2 variations of refresh
Auto refresh
Self refresh
Document No. E0216E10 (Ver. 1.0)
Date Published September 2001 (K)
Printed in Japan
URL: http://www.elpida.com
C
Elpida Memory, Inc. 2001
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.