EBD11UD8ABFB
Serial PD Matrix
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
128 bytes
Number of bytes utilized by module
0
1
1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
80H
08H
manufacturer
Total number of bytes in serial PD
256 bytes
device
2
3
4
5
6
7
8
Memory type
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
1
1
0
0
0
0
1
1
0
1
1
0
0
0
1
1
1
0
0
0
0
07H
0DH
0BH
02H
40H
00H
04H
DDR SDRAM
Number of row address
Number of column address
Number of DIMM banks
Module data width
13
11
2
64
Module data width continuation
0
Voltage interface level of this assembly 0
SSTL2
DDR SDRAM cycle time, CL = 2.5
9
0
1
1
1
1
1
1
0
1
1
0
0
0
0
1
0
0
0
0
0
1
0
60H
75H
70H
6.0ns*1
7.5ns*1
0.7ns*1
-6B
-7A, -7B
SDRAM access from clock (tAC)
-6B
0
0
10
-7A, -7B
0
0
1
0
0
1
0
0
0
0
1
0
0
0
0
1
0
0
0
0
0
0
0
1
0
1
0
0
0
0
0
0
1
0
0
1
0
0
0
0
75H
00H
82H
08H
00H
0.75ns*1
None.
7.6µs
× 8
11
12
13
14
DIMM configuration type
Refresh rate/type
Primary SDRAM width
Error checking SDRAM width
None.
SDRAM device attributes:
Minimum clock delay back-to-back
column access
15
0
0
0
0
0
0
0
1
01H
1 CLK
SDRAM device attributes:
16
17
18
19
20
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
0
0
1
0
0
0
1
0
0EH
04H
0CH
01H
02H
2,4,8
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
SDRAM device attributes:
/WE latency
4
2, 2.5
0
1
Differential
Clock
VDD ± 0.2V
21
22
23
SDRAM module attributes
0
1
0
1
0
1
1
0
1
0
1
1
0
0
1
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
1
0
20H
C0H
75H
A0H
SDRAM device attributes: General
Minimum clock cycle time at CL = 2
-6B, -7A
7.5ns*1
-7B
10ns*1
Maximum data access time (tAC) from
24
clock at CL = 2
-6B
0
1
1
1
0
0
0
0
70H
0.7ns*1
-7A, -7B
0
0
1
0
1
0
1
0
0
0
1
0
0
0
1
0
75H
00H
0.75ns*1
25 to 26
27
Minimum row precharge time (tRP)
-6B
-7A, -7B
0
0
1
1
0
0
0
1
1
0
0
0
0
0
0
0
48H
50H
18ns
20ns
Preliminary Data Sheet E0296E20 (Ver. 2.0)
5
ELPIDA [ ELPIDA MEMORY ]
