㪛㫌㪸㫃㩷㪥㪄㪺㪿㪸㫅㫅㪼㫃㩷㪤㪦㪪㪝㪜㪫
㪜㪣㪤㪊㪍㪏㪇㪇㪜㪘㪄㪪
䂓㪫㫐㫇㫀㪺㪸㫃㩷㪼㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪸㫅㪻㩷㫋㪿㪼㫉㫄㪸㫃㩷㪺㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊
On-Resistance Variation with
Drain Current and Gate Voltage.
On-Region Characteristics.
2
10
VGS= 10V
6.0V
4.5V
1.8
1.6
1.4
1.2
1
8
V
GS= 4.0V
4.0V
6
4
2
4.5V
5.0V
3.5V
3.0V
6.0V
7.0V
10V
0.8
0
0
2
4
6
8
10
0
1
2
3
4
V
GS, Drain-Source Voltage(V)
ID, Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage.
On-Resistance Variation with Temperature.
0.275
1.6
1.4
1.2
1
I
D
= 3.5A
GS= 10V
I =2A
D
V
0.225
0.175
0.125
0.075
0.025
T
A
= 125°C
TA
= 25°C
0.8
0.6
-50
2
4
6
8
10
-25
0
25
50
75
100
125
150
V
GS, Gate to Source Voltage(V)
TJ, Junction Temperature(°C)
Body Diode Forword Voltage Variation with
Source Current and Temperature.
Transfer Characteristics.
10
1
10
VGS= 0V
V
DS= 5V
125°C
TA= -55°C
8
TA= 125°C
25°C
-55°C
25°C
0.1
0.01
6
4
2
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
6
VSD, Body Diode Forword Voltage(V)
V
GS, Gate to Source Voltage(V)
㪋㪄㪊
ELM-TECH [ ELM Technology Corporation ]
