Complementary MOSFET
ELM36601EA-S
■General Description
ELM36601EA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
•
•
•
•
N-channel
Vds=30V
Id=3.5A
Rds(on) < 58mΩ(Vgs=10V)
Rds(on) < 88mΩ(Vgs=4.5V)
P-channel
Vds=-30V
Id=-2A
Rds(on) < 115mΩ(Vgs=-10V)
Rds(on) < 185mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj,Tstg
N-ch (Max.)
30
±20
3.5
2.8
10
1.15
0.73
-55 to 150
P-ch (Max.)
-30
±20
-2.3
-1.8
-10
1.15
0.73
-55 to 150
Unit Note
V
V
A
A
W
°C
3
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤5s
Steady-state
Steady-state
t≤5s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Rθja
Rθjl
P-ch
Device
N-ch
Typ.
Max.
110
150
80
110
150
80
°C/W
Unit
Note
°C/W
■Pin Configuration
SOT-26(TOP VIEW)
6
■Circuit
Pin No.
1
2
3
4
5
6
Pin name
GATE1
SOURCE2
GATE2
DRAIN2
SOURCE1
DRAIN1
G1
S1
•
N-ch
D1
•
P-ch
D2
5
4
1
2
3
G2
S2
7- 1
ELM-TECH [ ELM Technology Corporation ]
