Single P-channel MOSFET
ELM34401AA-N
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
-30
V
Vds=-24V, Vgs=0V
Idss
-1
Zero gate voltage drain current
μA
Vds=-20V,Vgs=0V,Tj=125°C
-10
±
±
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs= 20V
100 nA
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
-0.8 -1.5 -2.5
-30
V
A
1
1
Vgs=-10V, Id=-8A
Rds(on)
28
44
7
35 mΩ
60 mΩ
S
Static drain-source on-resistance
Vgs=-4.5V, Id=-6A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=-10V, Id=-6A
1
1
Vsd Is=-1A, Vgs=0V
-1
-3
-6
V
A
A
Is
Ism
3
Ciss
970
370
180
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
28
6
nC
nC
nC
ns
2
2
2
2
2
2
2
Vgs=-10V, Vds=-15V
Gate-source charge
Qgs
Id=-8A
Qgd
Gate-drain charge
12
20
17
180
75
7.9
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=-10V, Vds=-15V,
ns
Turn-off delay time
td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω
ns
Turn-off fall time
tf
ns
Body diode reverse recovery charge
Qrr
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
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