Single P-channel MOSFET
ELM34415AA-N
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
-30
V
Vds=-24V, Vgs=0V
Idss
-1
Zero gate voltage drain current
μA
Vds=-20V, Vgs=0V, Tj=125
°C
-10
±
±
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs= 25V
100 nA
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
-1.0 -1.5 -3.0
-50
V
A
1
1
Vgs=-10V, Id=-13A
Rds(on)
9.0 10.5 mΩ
13.0 16.0 mΩ
Static drain-source on-resistance
Vgs=-4.5V, Id=-10A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=-10V, Id=-13A
29
S
1
1
Vsd Is=If, Vgs=0V
-1.2
-2.7
-4
V
A
A
Is
Ism
3
Ciss
4200
1218
504
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
42.0 58.0 nC
2
2
2
2
2
2
2
Vgs=-10V, Vds=-15V
Gate-source charge
Qgs
12.6
15.4
16.8
22.4
7.0
nC
nC
ns
Id=-13A
Qgd
Gate-drain charge
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=-10V, Vds=-15V
ns
Turn-off delay time
td(off) Id≈-1A, Rgen=6Ω
tf
ns
Turn-off fall time
140.0
ns
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2
ELM-TECH [ ELM Technology Corporation ]
