Single P-channel MOSFET
ELM34417AA-N
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
-30
V
Vds=-24V, Vgs=0V
Idss
-1
Zero gate voltage drain current
μA
Vds=-20V, Vgs=0V, Tj=125
°C
-10
±
±
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs= 20V
100 nA
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
-0.9 -1.5 -3.0
-30
V
A
1
1
Vgs=-10V, Id=-6A
Rds(on)
37
60
16
45 mΩ
75 mΩ
S
Static drain-source on-resistance
Vgs=-4.5V, Id=-5A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=-10V, Id=-6A
1
1
Vsd Is=-1A, Vgs=0V
-1.2
-2.1
-4
V
A
A
Is
Ism
3
Ciss
530
135
70
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
10.0 14.0 nC
2
2
2
2
2
2
2
Vgs=-10V, Vds=-15V
Gate-source charge
Qgs
2.2
2.0
nC
nC
ns
Id=-6A
Qgd
Gate-drain charge
Turn-on delay time
td(on)
5.7
Turn-on rise time
tr
Vgs=-10V, Vds=-15V
10.0
18.0
5.0
ns
Turn-off delay time
td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω
tf
ns
Turn-off fall time
ns
Body diode reverse recovery time
Body diode reverse recovery charge
trr
If=-5A, dl/dt=100A/μs
15.5
7.9
ns
Qrr If=-5A, dl/dt=100A/μs
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
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