㪪㫀㫅㪾㫃㪼㩷㪥㪄㪺㪿㪸㫅㫅㪼㫃㩷㪤㪦㪪㪝㪜㪫
㪜㪣㪤㪊㪋㪋㪈㪋㪘㪘㪄㪥
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to-Source Voltage
0.040
60
10
0.032
0.024
0.016
TJ=150°C
TJ=25°C
ID=15A
0.008
0.000
1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
GS - Gate-to-Source Voltage(V)
VSD- Source-to-Drain Voltage(V)
Threshold Voltage
Single Pulse Power
0.4
0.2
50
40
ID = 250ӴA
0.0
30
TA=25°C
-0.2
-0.4
20
10
0
-0.6
-0.8
10
-50
-25
0
25
50
75 100 125 150
10-2
10-1
1
T
J- Temperature(°C)
Time(sec)
Safe Operating Area, Junction-to Ambient
100
Limited by rDS(on)
10
100Ӵs,10Ӵs
1ms
1
10ms
100ms
1s
0.1
TA=25°C
Single Pulse
10s
dc,100s
0.01
0.1
10
100
1
VDS- Drain-to-Source Voltage(V)
㪌㪄㪋
ELM-TECH [ ELM Technology Corporation ]
