㪪㫀㫅㪾㫃㪼㩷㪥㪄㪺㪿㪸㫅㫅㪼㫃㩷㪤㪦㪪㪝㪜㪫
㪜㪣㪤㪊㪊㪋㪈㪇㪚㪘㪄㪪
Gate-Charge Characteristics
Capacitance Characteristics
1100
900
5
4
3
2
1
0
I
D
= 5A
VDS= 5V
f =1MHz
GS=0 V
V
C
iss
10V
700
500
300
100
0
C
oss
rss
C
0
2
4
6
8
10
0
4
8
12
16
20
Qg Gate Charge (nC)
V
DS, Drain to Source Voltage(V)
Maxmum Safe Operating Area.
Single Puise Maximum Power Dissipation.
100
20
R
DS(ON) LIMIT
SINGLE PULSE
1ms
R
Ӱ
JA=100°C/W
10
1
15
12
8
10ms
TA=25°C
100ms
1s
10s
DC
V
GS =4.5V
SINGLE PULSE
0.1
RӰJA=100°C/W
4
TA=25°C
0.01
0.1
0
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
GS,Drain-Source Voltage(V)
Single Pulse Time(SEC)
Transisent Thermal Response Curve.
1
D=0.5
0.2
0.5
0.2
0.1
RӰJA(t) = r(t) * RӰ˝˔
0.1
RӰJA=100°C/W
0.05
0.05
0.02
0.02
0.01
0.01
t1
Single Pulse
t2
0.005
T
J
-T
A
=P*R JA(t)
Ӱ
Duty Cycle, D= t
1
/ t2
0.002
0.001
0.0001
0.001
0.01
1
10
100
300
Time(0S.1EC)
㪋㪄㪋
ELM-TECH [ ELM Technology Corporation ]
