Single P-channel MOSFET
ELM16405EA-S
1200
1000
800
10
8
Vds=-15V
Id=-5A
Ciss
6
600
4
400
Coss
2
200
Crss
0
0
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-Vds (Volts)
Figure 8: Capacitance Characteristics
100
10
1
Tj(max)=150°C
Ta=25°C
40
30
20
10
0
Tj(max)=150°C
Ta=25°C
10ꢀs
100ꢀs
1ms
Rds(on)
limited
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-Vds (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
j,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
Pd
0.1
Ton
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4 - 4