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ELM16601EA-S 参数 Datasheet PDF下载

ELM16601EA-S图片预览
型号: ELM16601EA-S
PDF下载: 下载PDF文件 查看货源
内容描述: 互补MOSFET [Complementary MOSFET]
分类和应用:
文件页数/大小: 7 页 / 587 K
品牌: ELM-TECH [ ELM Technology Corporation ]
 浏览型号ELM16601EA-S的Datasheet PDF文件第1页浏览型号ELM16601EA-S的Datasheet PDF文件第2页浏览型号ELM16601EA-S的Datasheet PDF文件第3页浏览型号ELM16601EA-S的Datasheet PDF文件第4页浏览型号ELM16601EA-S的Datasheet PDF文件第6页浏览型号ELM16601EA-S的Datasheet PDF文件第7页  
Complementary MOSFET  
ELM16601EA-S  
■Electrical Characteristics (P-ch)  
Ta=25°C  
Parameter  
Symbol  
Conditions  
Min.  
-30  
Typ. Max. Unit  
STATIC PARAMETERS  
Drain source breakdown voltage  
-
BVdss Id=  
-
250μA, Vgs=0V  
V
-1  
Zero gate voltage drain current  
Idss Vds=-24V, Vgs=0V  
μA  
-5  
Tj=55°C  
Gate-body leakage current  
Gate threshold voltage  
On state drain current  
Igss Vds=0V, Vgs=±12V  
Vgs(th) Vds=Vgs, Id=-250μA  
Id(on) Vgs=-4.5V, Vds=-5V  
±100  
-1.4  
nA  
V
-0.6  
-10  
-1.0  
107  
A
135  
Vgs=-10V, Id=-2.3A  
mΩ  
Tj=125°C  
Static drain source on resistance  
Rds(on)  
-
-
Vgs=-4.5V, Id=-2A  
135  
195  
8
185  
265  
mΩ  
mΩ  
S
Vgs=-2.5V, Id=-1A  
Gfs Vds=-5V, Id=-2.3A  
Vsd Is=-1A, Vgs=0V  
Is  
Forward transconductance  
Diode forward voltage  
-0.85 -1.00  
-1.35  
V
Max. body diode continuous current  
-
A
DYNAMIC PARAMETERS  
Input capacitance  
Ciss  
409  
55  
pF  
pF  
pF  
Ω
Output capacitance  
Coss Vgs=0V, Vds=-15V, f=1MHz  
Crss  
Reverse transfer capacitance  
Gate resistance  
42  
Rg Vgs=0V, Vds=0V, f=1MHz  
12  
SWITCHING PARAMETERS  
Total gate charge  
Qg  
4.80  
1.34  
0.72  
13  
nC  
nC  
nC  
ns  
Vgs=-4.5V, Vds=-15V  
Gate-source charge  
Qgs  
Id=-2.5A  
Qgd  
Gate-drain charge  
Turn-on delay time  
td(on)  
Turn-on rise time  
tr  
Vgs=-10V, Vds=-15V  
10  
ns  
Turn-off delay time  
td(off) Rl=6Ω, Rgen=6Ω  
tf  
28  
ns  
Turn-off fall time  
13  
ns  
Body diode reverse recovery time  
Body diode reverse recovery charge  
trr  
If=-2.5A, dl/dt=100A/μs  
26.0  
15.6  
ns  
Qrr If=-2.5A, dl/dt=100A/μs  
nC  
NOTE :  
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment  
with Ta=25°C. The value in any given applications depends on the users specific board design, The current rating is  
based on the t ≤ 10s themal resistance rating.  
2. Repetitive rating, pulse width limited by junction temperature.  
3. The ja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.  
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.  
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment  
with Ta=25°C. The SOA curve provides a single pulse rating.  
7 - 5