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ELM13406CA-S 参数 Datasheet PDF下载

ELM13406CA-S图片预览
型号: ELM13406CA-S
PDF下载: 下载PDF文件 查看货源
内容描述: 单N沟道MOSFET [Single N-channel MOSFET]
分类和应用:
文件页数/大小: 4 页 / 412 K
品牌: ELM-TECH [ ELM Technology Corporation ]
 浏览型号ELM13406CA-S的Datasheet PDF文件第1页浏览型号ELM13406CA-S的Datasheet PDF文件第3页浏览型号ELM13406CA-S的Datasheet PDF文件第4页  
Single N-channel MOSFET  
ELM13406CA-S  
■Electrical characteristics  
Ta=25°C  
Parameter  
Symbol  
Condition  
Min.  
30  
Typ.  
Max. Unit  
STATIC PARAMETERS  
Drain-source breakdown voltage  
BVdss Id=250μA, Vgs=0V  
Idss Vds=24V, Vgs=0V  
V
1
Zero gate voltage drain current  
μA  
5
Tj=55°C  
±
Gate-body leakage current  
Gate threshold voltage  
On state drain current  
Igss Vds=0V, Vgs= 20V  
100  
3.0  
nA  
V
Vgs(th) Vds=Vgs, Id=250μA  
Id(on) Vgs=10V, Vds=5V  
1.0  
15  
1.9  
A
50  
74  
65  
Vgs=10V, Id=3.6A  
Rds(on)  
mΩ  
Static drain-source on-resistance  
Tj=125°C  
100  
Vgs=4.5V, Id=2.8A  
Gfs Vds=5V, Id=3.6A  
Vsd Is=1A  
75  
105 mΩ  
S
Forward transconductance  
Diode forward voltage  
Max. body-diode continuous current  
DYNAMIC PARAMETERS  
Input capacitance  
7
0.79  
1.00  
2.5  
V
A
Is  
Ciss  
288  
57  
39  
3
375  
6
pF  
pF  
pF  
Ω
Output capacitance  
Coss Vgs=0V, Vds=15V, f=1MHz  
Crss  
Reverse transfer capacitance  
Gate resistance  
Rg Vgs=0V, Vds=0V, f=1MHz  
SWITCHING PARAMETERS  
Total gate charge (10V)  
Total gate charge (4.5V)  
Gate-source charge  
Qg  
6.5  
3.1  
1.2  
1.6  
4.6  
1.9  
20.1  
2.6  
10.2  
3.5  
8.5  
4.0  
nC  
nC  
nC  
nC  
ns  
Qg  
Vgs=10V, Vds=15V, Id=3.6A  
Qgs  
Gate-drain charge  
Qgd  
Turn-on delay time  
td(on)  
Turn-on rise time  
tr  
Vgs=10V, Vds=15V  
ns  
Turn-off delay time  
td(off) Rl=2.2Ω, Rgen=3Ω  
tf  
ns  
Turn-off fall time  
ns  
Body diode reverse recovery time  
Body diode reverse recovery charge  
trr  
If=3.6A, dl/dt=100A/μs  
14.0  
ns  
Qrr If=3.6A, dl/dt=100A/μs  
nC  
NOTE :  
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment  
with Ta=25°C. The value in any given applications depends on the users specific board design, The current rating is  
based on the t ≤ 10s themal resistance rating.  
2. Repetitive rating, pulse width limited by junction temperature.  
3. The ja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.  
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.  
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment  
with Ta=25°C. The SOA curve provides a single pulse rating.  
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