HTD 3
200
O
C High Temperature
High Voltage Rectifier Diodes
Exceptional high temperature Stability
U
up t o 20 0
O
C
Exceptionally low leakage
Small size
3 KV P RV
Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated
temperatures. All diodes are subjected to 10 test temperature cycles from -55
O
C to + 200
O
C.
EDI TYPE NO.
HTD 3
PEAK REVERSE VOL TAGE
3,000V
DIMENSIONS
See Fig.3
ELECTRICAL CHARACTERISTICS (at T
A
=25 C Unless Otherwise Specified)
O
Average Rectified Forward Current, @ 50 C I
O
Average Rectified Forward Current, @ 200 C I
O
Max. DC Reverse Current @ PRV @ 25 C, I
R
Max. DC Reverse Current @ PRV @ 200 C,I
R
(See Note:1)
O
O
O
O
50 mA
1 mA
0.1
A
30
A
max
18
A
typical
25 V
See Note 2
-55
C
to+200
C
-55
C
to+200
C
Note 2
All diodes are hot forward swept for forward
O
stability to maximum temperature of 200 C on
dynamic display on curve trace oscilloscope.
O
O
O
O
Max. Forward Voltage Drop at 25 C and 10mA ,V
F
(Volts)
Forward Stability T
j
200 C
Ambient Operating Temperature Range
O
O
Storage Temperature Range,T
Note1 I
R
at 200
O
C readings are taken in oil after voltage
has been applied to device for 5 minutes.
EDI reserves the rightto change these specifications at any time without notice.
EDI [ ELECTRONIC DEVICES INC. ]
