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DTC123YN3-0-T1-G 参数 Datasheet PDF下载

DTC123YN3-0-T1-G图片预览
型号: DTC123YN3-0-T1-G
PDF下载: 下载PDF文件 查看货源
内容描述: [NPN Digital Transistors (Built-in Resistors)]
分类和应用:
文件页数/大小: 6 页 / 314 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号DTC123YN3-0-T1-G的Datasheet PDF文件第1页浏览型号DTC123YN3-0-T1-G的Datasheet PDF文件第3页浏览型号DTC123YN3-0-T1-G的Datasheet PDF文件第4页浏览型号DTC123YN3-0-T1-G的Datasheet PDF文件第5页浏览型号DTC123YN3-0-T1-G的Datasheet PDF文件第6页  
Spec. No. : C362N3  
Issued Date : 2002.08.16  
Revised Date :2014.09.17  
Page No. : 2/6  
CYStech Electronics Corp.  
Absolute Maximum Ratings (Ta=25)  
Parameter  
Symbol  
Vcc  
Vin  
Limits  
Unit  
V
V
mA  
mA  
mW  
°C/W  
°C  
Supply Voltage  
Input Voltage  
50  
-5~+12  
100  
100  
200  
625  
-55~+150  
-55~+150  
Io  
Output Current  
Io(max.)  
Pd  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
RθJA  
Tj  
Tstg  
°C  
Electrical Characteristics (Ta=25)  
Parameter  
Input Voltage  
Symbol Min. Typ. Max. Unit  
Test Conditions  
Vi(off)  
Vi(on)  
Vo(on)  
Ii  
Io(off)  
Gi  
-
3
-
-
-
-
-
0.3  
-
0.3  
3.8  
0.5  
-
V
V
V
Vcc=5V, Io=100uA  
Vo=0.2V, Io=5mA  
Io/Ii=10mA/0.5mA  
Output Voltage  
Input Current  
0.1  
-
-
-
mA Vi=5V  
μA  
-
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
Vcc=50V, Vi=0V  
Vo=5V, Io=5mA  
33  
R1  
R2/R1  
fT  
1.54 2.2 2.86  
-
-
kΩ  
-
3.6  
-
4.5  
250  
5.5  
-
MHz VCE=10V, IC=5mA, f=100MHz*  
* Transition frequency of the device  
Recommended Soldering Footprint  
DTC123YN3  
CYStek Product Specification