Spec. No. : C264N3
Issued Date : 2003.09.18
Revised Date :
CYStech Electronics Corp.
Page No. : 2/3
Characteristics (Ta=25℃)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
BVCBO
-50
-
-
-
-
V
V
V
IC=-50µA
IC=-1mA
IE=-50µA
BVCEO
-50
-
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
BVEBO
ICBO
IEBO
-5
-
-
-
-
-
-0.5 µA VCB=-50V
-0.5 µA VEB=-4V
VCE(sat)
-
0.1 -0.3
600
V
IC=-5mA, IB=-0.25mA
DC Current Gain
hFE
R
fT
100
-
-
kΩ
VCE=-5V, IC=-1mA
-
Input Resistance
1.54 2.2 2.86
Transition Frequency
-
250
-
MHz VCE=-10V, IC=-5mA, f=100MHz*
* Transition frequency of the device
DTA123TN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
