Spec. No. : C358S3
Issued Date : 2004.03.09
Revised Date :2016.07.18
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
50
50
5
100
200
V
V
V
mA
mW
°C
°C
150
Tstg
-55~+150
Electrical Characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
50
50
5
-
-
-
-
-
-
-
-
-
V
V
V
IC=50μA
IC=1mA
IE=50μA
-
-
0.5
0.5
0.3
600
μA VCB=50V
μA VEB=4V
-
-
V
-
IC=1mA, IB=0.1mA
100
VCE=5V, IC=1mA
-
Input Resistance
R
70 100 130
250
kΩ
Transition Frequency
fT
-
-
MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
Recommended Soldering Footprint
DTC115TS3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
