欢迎访问ic37.com |
会员登录 免费注册
发布采购

DTC114YK8S3-0-T1-G 参数 Datasheet PDF下载

DTC114YK8S3-0-T1-G图片预览
型号: DTC114YK8S3-0-T1-G
PDF下载: 下载PDF文件 查看货源
内容描述: [NPN Digital Transistors]
分类和应用:
文件页数/大小: 6 页 / 278 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号DTC114YK8S3-0-T1-G的Datasheet PDF文件第1页浏览型号DTC114YK8S3-0-T1-G的Datasheet PDF文件第3页浏览型号DTC114YK8S3-0-T1-G的Datasheet PDF文件第4页浏览型号DTC114YK8S3-0-T1-G的Datasheet PDF文件第5页浏览型号DTC114YK8S3-0-T1-G的Datasheet PDF文件第6页  
Spec. No. : C355S3  
Issued Date : 2016.01.27  
Revised Date : 2016.07.18  
Page No. : 2/6  
CYStech Electronics Corp.  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Supply Voltage  
Input Voltage  
VCC  
VI  
IO  
IO(max.)  
Pd  
RθJA  
VESD  
Tj  
50  
-6~+40  
70  
100  
150  
833  
8000  
150  
V
V
mA  
mA  
mW  
°C/W  
V
°C  
°C  
Output Current  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
ESD susceptibility  
Junction Temperature  
Storage Temperature  
Tstg  
-55~+150  
Electrical Characteristics (Ta=25°C)  
Parameter  
Input Voltage  
Symbol Min. Typ. Max. Unit  
Test Conditions  
Vi(off)  
Vi(on)  
Vo(on)  
Ii  
-
3
-
-
-
0.1  
-
0.3  
-
0.3  
V
V
V
Vcc=5V, Io=100uA  
Vo=0.3V, Io=1mA  
Io/Ii=5mA/0.25mA  
Output Voltage  
Input Current  
-
0.88 mA Vi=5V  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
Io(off)  
Gi  
R1  
R2/R1  
fT  
-
68  
7
3.7  
-
-
-
0.5  
-
13  
5.7  
-
uA  
-
kΩ  
-
Vcc=50V, Vi=0V  
Vo=5V, Io=5mA  
-
-
10  
4.7  
250  
MHz VCE=10V, IC=5mA, f=100MHz *  
* Transition frequency of the device  
Recommended Soldering Footprint  
DTC114YK8S3  
CYStek Product Specification