Spec. No. : C649S3
Issued Date : 2017.01.04
Revised Date : 2017.02.08
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Limits
50
50
5
100
200
625
-55~+150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
Tstg
°C
Electrical Characteristics (Ta=25℃)
Symbol Min. Typ. Max. Unit
Test Conditions
IC=50μA
IC =1mA
IE=720μA
VCB=50V
VEB=4V
IC =10mA, IB=0.5mA
VCE=5V, IC =5mA
-
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
HFE
50
50
5
-
-
-
-
-
-
-
-
V
V
V
nA
μA
mV
-
-
500
580
120
-
300
-
30
7
-
-
Emitter-Base Resistance
R
10
13
kΩ
VCE=10V, IC=5mA,
f=100MHz*
Transition Frequency
fT
-
250
-
MHz
* Transition frequency of the device
Recommended Soldering Footprint
DTC114GS3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
