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DTA144WS3_16 参数 Datasheet PDF下载

DTA144WS3_16图片预览
型号: DTA144WS3_16
PDF下载: 下载PDF文件 查看货源
内容描述: [PNP Digital Transistors (Built-in Resistors)]
分类和应用:
文件页数/大小: 6 页 / 282 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号DTA144WS3_16的Datasheet PDF文件第1页浏览型号DTA144WS3_16的Datasheet PDF文件第3页浏览型号DTA144WS3_16的Datasheet PDF文件第4页浏览型号DTA144WS3_16的Datasheet PDF文件第5页浏览型号DTA144WS3_16的Datasheet PDF文件第6页  
Spec. No. : C276S3  
Issued Date : 2012.10.05  
Revised Date : 2016.07.18  
Page No. : 2/6  
CYStech Electronics Corp.  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
VCC  
VI  
IO  
IO(max.)  
PD  
RθJA  
Tj  
Tstg  
Limits  
-50  
-40~+10  
-30  
-100  
200  
625  
Unit  
V
V
mA  
mA  
mW  
°C/W  
°C  
Supply Voltage  
Input Voltage  
Output Current  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
150  
-55~+150  
°C  
Electrical Characteristics (Ta=25°C)  
Parameter  
Input Voltage  
Symbol Min. Typ. Max. Unit  
Test Conditions  
VI(off)  
VI(on)  
VO(on)  
II  
IO(off)  
GI  
-
-4  
-
-
-0.8  
-
-0.3  
V
V
V
VCC=-5V, IO=-100μA  
VO=-0.3V, IO=-2mA  
IO=-10mA, II=-0.5mA  
Output Voltage  
Input Current  
Output Current  
-0.03 -0.1  
-
-
56  
-
-
-
-
-
-
-0.16 mA VI=-5V  
-0.5  
-
-0.5  
-
μA  
-
μA  
-
VCC=-50V, VI=0V  
VO=-5V, IO=-5mA  
VCB=-50V, IE=0A  
VCE=-5V, IC=-5mA  
IC=-10mA, IB=-0.5mA  
IC=-1mA, IB=-20μA  
-
DC Current Gain  
C-B Cutoff Current  
DC Current Gain  
C-E Saturation Voltage  
B-E Saturation Voltage  
Input Resistance  
Resistance Ratio  
Transition Frequency  
ICBO  
HFE  
56  
VCE(sat)  
VBE(sat)  
R1  
R2/R1  
fT  
-0.03 -0.1  
-0.3  
-1.5  
61.1  
V
V
kΩ  
-
-1.0  
32.9  
-1.3  
47  
0.37 0.47 0.57  
250  
-
-
-
MHz VCE=-10V, IC=-5mA, f=100MHz *  
* Transition frequency of the device  
Recommended Soldering Footprint  
DTA144WS3  
CYStek Product Specification