Spec. No. : C254N3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 2/3
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown
VCBO
VCEO
VEBO
-50
-50
-5
-
-
-
-
-
-
V
V
V
IC=-50uA
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
IC=-1mA
IE=-50uA
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
ICBO
IEBO
-
-
-
-
-0.5 uA VCB=-50V
-0.5 uA VEB=-4V
VCE(sat)
-
0.1 -0.3
V
IC=-10mA, IB=-1mA
DC Current Gain
hFE
R
fT
100
7
-
-
600
13
-
-
kΩ
VCE=-5V, IC=-1mA
-
Input Resistance
10
Transition Frequency
250
MHz VCE=-10V, IE=-5mA, f=100MHz*
* Transition frequency of the device
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
1000
100
10
100
VCE(SAT)@IC=10I
HFE@VCE=5
10
10
0.1
1
100
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
PD - Ta
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
DTA114TN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
