Spec. No. : C179SP
Issued Date : 2017.08.23
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
The following specifications apply to each die
Absolute Maximum Ratings (TA=25℃, unless otherwise noted)
Parameters
Conditions
Symbol
VRRM
VRMS
VR
Value
650
Units
Repetitive peak reverse voltage
RMS voltage
V
V
V
455
Continuous reverse voltage
650
Single phase half wave,
Forward rectified current (per die)
IF(AV)
IFRM
1
A
A
°
60Hz @TJ=25 C
Single phase half wave,
Repetitive Peak Forward Current
(per die)
1.57
°
60Hz @TJ=25 C
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
Forward surge current
(per die)
IFSM
trr
9
A
Maximum reverse recovery time
(per die)
IF=1A, dIF/dt=100A/μs
1000
ns
Storage temperature range
Tstg
Tj
-55~+150
-55~+150
°C
°C
Operating junction temperature range
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
10
39
75
169
12.5
3.2
1.7
Thermal Resistance, Junction-to-ambient, max (Note 1 )
Thermal Resistance, Junction-to-ambient, max (Note 2 )
Thermal Resistance, Junction-to-ambient, max (Note 3)
Power Dissipation @ TC=25°C
Power Dissipation @ TA=25°C
Power Dissipation @ TA=25°C
Power Dissipation @ TA=25°C
°C/W
Rth,j-a
PD
(Note 1 )
(Note 2 )
(Note 3 )
W
0.74
Note: 1. Device mounted on FR-4 PCB, single sided 2 oz. copper, pad dimension 50mm×50mm.
2. Device mounted on FR-4 PCB, single sided 1 oz. copper, pad dimension 25mm×25mm.
3. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad dimension.
Characteristics (TA=25°C, unless otherwise noted)
Characteristic
Symbol
VR
Condition
IR=100μA
Min.
650
Typ
-
Max. Unit
-
V
-
VF 1
VF 2
IR
IF=100mA
-
-
-
-
-
0.95
1.2
100
10
Forward Voltage
V
-
IF=500mA
-
-
VR=540V
nA
μA
pF
Reverse Leakage Current
Junction Capacitance
IR
VR=540V, TA=125°C
VR=1V, f=1MHz
11.6
CJ
-
DISP0165CTSP
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
