Spec. No. : C065SP
Issued Date : 2017.09.28
Revised Date : 2017.09.29
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings (TA=25℃, unless otherwise noted)
Parameters
Conditions
Symbol
Value
Units
Repetitive peak reverse voltage
RMS voltage
VRRM
VRMS
VR
650
455
650
V
V
V
Continuous reverse voltage
Single phase half wave,
Forward rectified current
IF(AV)
IFRM
3
A
A
°
60Hz @TJ=25 C
Single phase half wave,
Repetitive Peak Forward Current
4.7
°
60Hz @TJ=25 C
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
Forward surge current
IFSM
52
A
Maximum reverse recovery time
Storage temperature range
IF=1A, dIF/dt=100A/μs
trr
Tstg
Tj
1
μs
-55~+150
-55~+150
°C
°C
Operating junction temperature range
Thermal Data
Parameter
Symbol
Rth,j-c
Value
6.5
39
75
169
19
3.2
1.7
0.74
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1 )
Thermal Resistance, Junction-to-ambient, max (Note 2 )
Thermal Resistance, Junction-to-ambient, max (Note 3)
Power Dissipation @ TC=25°C
Power Dissipation @ TA=25°C
Power Dissipation @ TA=25°C
Power Dissipation @ TA=25°C
°C/W
Rth,j-a
PD
(Note 1 )
(Note 2 )
(Note 3 )
W
Note: 1. Device mounted on FR-4 PCB, single sided 2 oz. copper, pad dimension 50mm×50mm.
2. Device mounted on FR-4 PCB, single sided 1 oz. copper, pad dimension 25mm×25mm.
3. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad dimension.
Characteristics (TA=25°C, unless otherwise noted)
Characteristic
Symbol
Condition
IR=100μA
Min.
650
Typ
Max. Unit
-
-
-
V
Continuous reverse voltage
VR
VF 1
VF 2
IF=1A
-
-
-
-
-
1.1
1.2
100
10
-
Forward Voltage
V
-
IF=3A
-
VR=540V
nA
μA
pF
Reverse Leakage Current
Junction Capacitance
IR
-
VR=540V, TA=125°C
VR=1V, f=1MHz
53
CJ
DIS0365SP
Preliminary
CYStek Product Specification