Spec. No. : C335N3
Issued Date : 2003.05.30
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
• Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -65~+150 °C
Junction Temperature Tj ............................................................................................................. +150 °C
• Maximum Power Dissipation
Total Power Dissipation Ptot (Note)........................................................................................... 350 mW
• Maximum Voltages and Currents
Repetitive Peak Reverse Voltage VRRM ............................................................................................ 300 V
DC Blocking Voltage VR………………………………………………………………………….. 240V
RMS Reverse Voltage VR(RMS)…………………………………………………………………….. 170V
Continuous Forward Current IF (Note)…………………………………………………………… 225 mA
Peak Repetitive Forward Current IFRM (Note)………..………………………………………….625 mA.
Surge Non-repetitive Forward Current IFSM @ tp=1µs........................................................................ 4A
@ tp=1s…….…………………………………………. 1A
• Thermal Resistance, Junction to Ambient Air RθJA……………………………………….……357℃/W
Note : Parts mounted on FR-4 board. For double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Symbol
Condition
IR=100µA
IF=20mA
Min.
300
-
-
-
Max.
Unit
V
mV
mV
nA
µA
pF
VBR
VF(1)
VF(2)
IR(1)
IR(2)
CD
-
870
1000
100
100
5
Forward Voltage (Note)
IF=100mA
VR=240V,Tj=25℃
VR=240V,Tj=150℃
VR=0V, f=1MHz
Reverse Leakage Current (Note)
Diode Capacitance
-
-
IF=IR=30mA RL=100Ω
Reverse Recovery Time
trr
50
ns
measured at IR=3mA
Notes: Pulse test, tp=380µs, duty cycle<2%.
CMBD2004/A/C/SN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
