CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C308N3-H
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
BTPA92N3
Description
•
High breakdown voltage. (BV
CEO
=-300V)
•
Low collector output capacitance.
•
Ideal for chroma circuit.
Symbol
BTPA92N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limits
-300
-300
-5
-500
225
556
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTPA92N3
CYStek Product Specification