CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
BTNA44N3
Features
•
High breakdown voltage. (BV
CEO
=400V)
•
Low saturation voltage, typically V
CE
(sat)
= 0.1V at I
C
/I
B
=10mA/1mA.
•
Complementary to BTPA94N3
Symbol
BTNA44N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limit
400
400
6
300
225
(Note)
556
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
BTNA44N3
CYStek Product Specification