CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C211A3
Issued Date : 2003.03.026
Revised Date :2005.03.21
Page No. : 1/5
BTNA44A3
Features
•
High breakdown voltage. (BV
CEO
=400V)
•
Low saturation voltage, typically V
CE
(sat) =60mV at I
C
/I
B=
10mA/1mA.
•
Complementary to BTPA94A3
Symbol
BTNA44A3
Outline
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (T
A
=25
℃
)
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw
≦
380µs,Duty
≦
2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
Tstg
Limit
400
400
6
300
0.625
150
-55~+150
Unit
V
V
V
mA
W
°C
°C
BTNA44A3
CYStek Product Specification