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BTNA29N3-0-T1-G 参数 Datasheet PDF下载

BTNA29N3-0-T1-G图片预览
型号: BTNA29N3-0-T1-G
PDF下载: 下载PDF文件 查看货源
内容描述: [General Purpose NPN Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 8 页 / 348 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTNA29N3-0-T1-G的Datasheet PDF文件第1页浏览型号BTNA29N3-0-T1-G的Datasheet PDF文件第2页浏览型号BTNA29N3-0-T1-G的Datasheet PDF文件第4页浏览型号BTNA29N3-0-T1-G的Datasheet PDF文件第5页浏览型号BTNA29N3-0-T1-G的Datasheet PDF文件第6页浏览型号BTNA29N3-0-T1-G的Datasheet PDF文件第7页浏览型号BTNA29N3-0-T1-G的Datasheet PDF文件第8页  
Spec. No. : C848N3-A  
Issued Date : 2004.03.26  
Revised Date : 2018.02.07  
Page No. : 3/9  
CYStech Electronics Corp.  
Typical Characteristics  
Emitter Grounded Output Characteristics  
Emitter Grounded Output Characteristics  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.2  
1
IB=5mA  
IB=1mA  
0.8  
0.6  
0.4  
0.2  
0
IB=500uA  
IB=100uA  
IB=0  
5
IB=0  
0
1
2
3
4
6
0
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)  
VCE, Collector-to-Emitter Voltage(V)  
Emitter Grounded Output Characteristics  
Emitter Grounded Output Characteristics  
1.6  
1.4  
1.2  
1
1.8  
IB=50mA  
1.6  
1.4  
1.2  
1
IB=20mA  
IB=10mA  
IB=10mA  
IB=5mA  
IB=4mA  
IB=2mA  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
IB=0  
5
IB=0  
5
0
1
2
3
4
6
0
1
2
3
4
6
VCE, Collector-to-Emitter Voltage(V)  
VCE, Collector-to-Emitter Voltage(V)  
Current Gain vs Collector Current  
Current Gain vs Collector Current  
1000  
100  
10  
100  
Ta=25°C  
VCE=5V  
10  
VCE=10V  
VCE=5V  
VCE=2V  
125°C  
75°C  
25°C  
0°C  
-40°C  
1
1
1
10  
100  
1000  
1
10  
IC, Collector Current(mA)  
100  
1000  
IC, Collector Current(mA)  
BTD2150N3  
CYStek Product Specification