Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2018.02.07
Page No. : 3/9
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1
IB=5mA
IB=1mA
0.8
0.6
0.4
0.2
0
IB=500uA
IB=100uA
IB=0
5
IB=0
0
1
2
3
4
6
0
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
VCE, Collector-to-Emitter Voltage(V)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
1.6
1.4
1.2
1
1.8
IB=50mA
1.6
1.4
1.2
1
IB=20mA
IB=10mA
IB=10mA
IB=5mA
IB=4mA
IB=2mA
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
IB=0
5
IB=0
5
0
1
2
3
4
6
0
1
2
3
4
6
VCE, Collector-to-Emitter Voltage(V)
VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
100
10
100
Ta=25°C
VCE=5V
10
VCE=10V
VCE=5V
VCE=2V
125°C
75°C
25°C
0°C
-40°C
1
1
1
10
100
1000
1
10
IC, Collector Current(mA)
100
1000
IC, Collector Current(mA)
BTD2150N3
CYStek Product Specification