Spec. No. : C319T3
Issued Date : 2016.12.23
Revised Date : 2017.05.12
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICP
IB
180
100
5
V
V
V
A
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
1
2 (Note )
0.2
Power Dissipation(TA=25℃)
1.6
W
Pd
Power Dissipation(TC=25℃)
10
W
Junction Temperature
Storage Temperature
Tj
Tstg
150
-55~+150
°C
°C
Note : Single pulse, Pw≤300μs, Duty Cycle≤2%.
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min.
180
100
5
-
-
Typ.
Max.
Unit
Test Conditions
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
mV
-
IC=100μA
IC=1mA
IE=10μA
BVCEO
BVEBO
ICBO
100
100
200
-
300
-
VCB=180V, IE=0
VEB=5V, IC=0
IEBO
*VCE(SAT)
*hFE 1
*hFE 2
*hFE 3
fT
-
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
90
100
20
50
-
-
-
-
20
MHz
pF
Cob
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTN6718T3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
