Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
BVCBO
180
160
6
-
-
-
V
IC=100µA
IC=1mA
BVCEO
BVEBO
ICBO
-
V
-
-
V
IE=10µA
VCB=120V
VEB=4V
-
-
-
50
50
0.15
0.2.
1
nA
nA
V
IEBO
-
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
fT
1
2
1
2
-
0.1
-
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=6V, IC=2mA
-
V
-
-
V
-
-
1
V
80
80
30
52
100
-
-
-
-
-
-
-
-
-
-
-
390
-
-
-
MHz
pF
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
Cob
-
6
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE4
Rank
K
P
Q
R
Range
52~120
82~180
120~270
180~390
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
VCE(SAT)@IC=10IB
1000
1000
100
10
HFE@VCE=6V
100
0.1
1
10
100
0.1
1
10
100
Collector Current--- IC(mA)
Collector Current ---IC(mA)
BTN5551N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
