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BTN5551K3-0-TB-G 参数 Datasheet PDF下载

BTN5551K3-0-TB-G图片预览
型号: BTN5551K3-0-TB-G
PDF下载: 下载PDF文件 查看货源
内容描述: [General Purpose NPN Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 6 页 / 244 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTN5551K3-0-TB-G的Datasheet PDF文件第1页浏览型号BTN5551K3-0-TB-G的Datasheet PDF文件第2页浏览型号BTN5551K3-0-TB-G的Datasheet PDF文件第3页浏览型号BTN5551K3-0-TB-G的Datasheet PDF文件第5页浏览型号BTN5551K3-0-TB-G的Datasheet PDF文件第6页  
Spec. No. : C208K3  
Issued Date : 2012.06.28  
Revised Date : 2012.10.02  
Page No. : 4/6  
CYStech Electronics Corp.  
Typical Characteristics(Cont.)  
Saturation Voltage vs Collector Current  
Current Gain vs Collector Current  
1000  
10000  
VBESAT@IC=10IB  
VCE=5V  
1000  
100  
1000  
100  
10  
100  
VCE=2V  
VCE=1V  
Ta=-40°C  
Ta=0°C  
Ta=25°C  
Ta=75°C  
Ta=125°C  
10  
100  
10  
1
1
10  
100  
0.1  
1
10  
100  
Collector Current---IC(mA)  
Collector Current--- IC(mA)  
Cutoff Frequency vs Collector Current  
Capacitance vs Reverse-biased Voltage  
VCE=10V  
Cib  
Cob  
0.1  
1
10  
100  
0.1  
1
10  
100  
Collector Current---IC(mA)  
Reverse-biased Voltage---VR(V)  
Power Derating Curve  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
0
50  
100  
150  
200  
Ambient Temperature---TA(℃)  
BTN5551K3  
CYStek Product Specification