Spec. No. : C853A3
Issued Date : 2004.07.14
Revised Date :2004.09.02
Page No. : 2/5
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
80
50
5
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
VEBO
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
IC
ICP
8
A
12
*1
Pd(TA=25℃)
0.75
150
-55~+150
W
°C
°C
Junction Temperature
Tj
Tstg
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO
50
-
-
-
-
-
-
-
-
-
-
-
-
-
V
µA
µA
mA
V
IC=1mA, IB=0
ICEO
-
10
10
2
VCE=40V, IE=0
VCB=80V, IE=0
VEB=5V, IC=0
ICBO
IEBO
-
-
*VCE(sat)
*VCE(sat)
1
-
1.3
1.5
2.1
2
2.1
-
20
-
IC=3A, IB=12mA
IC=5A, IB=20mA
IC=3A, IB=12mA
VCE=3V, IC=3A
VCE=4V, IC=4A
VCE=3V, IC=500mA
VCE=3V, IC=3A
VCE=4V, IC=4A
2
-
-
V
*VBE(sat)
V
*VBE(on)
*VBE(on)
*hFE 1
1
2
-
V
-
V
500
2
-
*hFE 2
*hFE 3
K
2
K
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTN2129A3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
