Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2004.04.12
Page No. : 2/5
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
-
Unit
Test Conditions
BVCBO
150
300
300
100
7.7
0.9
0.9
0.6
-
V
IC=100µA
IC=100µA
IC=10mA
IE=100µA
VCB=120V
VCE=120V
VEB=4V
BVCES
150
V
BVCEO
BVEBO
ICBO
75
-
-
V
5
V
-
10
10
10
40
200
1.2
500
1.2
1.2
-
nA
nA
nA
mV
mV
V
ICES
IEBO
-
-
VCE(sat) 1 *
VCE(sat) 2 *
VCE(sat) 3 *
VCE(sat) 4 *
-
IC=200mA, IB=20mA
IC=500mA, IB=20mA
IC=1A, IB=10mA
IC=2A, IB=100mA
IC=3A, IB=100mA
VCE=2V, IC=3A
-
-
-
-
-
-
1.1
1.1
-
600
180-
-
mV
V
VBE(sat)
VBE(on)
hFE 1
hFE 2
hFE 3
hFE 4
fT
*
*
-
-
V
*
*
*
*
270
300
120
10
-
-
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
1200
-
-
-
-
-
VCE=2V, IC=4.5A
140
20
-
MHz
pF
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Cob
-
-
*Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
BTN1053M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
