CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 1/4
BTD965A3
Features
•
Low V
CE
(sat), Low V
CE
(sat)=0.35 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386A3
Equivalent Circuit
BTD965A3
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC(cp)
Pd
Tj
Tstg
Limits
40
20
7
5
8
*1
0.75
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Note :
*1. Single Pulse Pw
≦
380us,Duty
≦
2%.
BTD965A3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
