CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 1/4
BTD882SA3
Features
•
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB772SA3
Symbol
BTD882SA3
Outline
TO-92
B:Base
C:Collector
E:Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350
µ
s,Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd
Tj
Tstg
Limit
60
50
5
3
(Note)
7
750
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTD882SA3
CYStek Product Specification