Spec. No. : C630T3
Issued Date : 2017.10.06
Revised Date :
CYStech Electronics Corp.
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limit
Unit
VCBO
VCEO
VEBO
40
30
9
3
7
V
V
V
A
A
DC
Pulse
Ta=25℃
Tc=25℃
Collector Current
Power Dissipation
IC
*1
1
10
PD
W
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Tj ; Tstg
-55~+150
°C
Thermal Performance
Parameter
Symbol
RθJA
RθJC
Limit
125
12.5
Unit
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
°C/W
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
40
30
9
-
-
-
-
100
160
-
-
-
-
-
-
0.2
1
-
-
90
17
-
-
-
V
V
V
nA
nA
V
V
-
-
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=40V, IE=0
100
100
0.5
1.5
-
320
-
-
IEBO
VEB=6V, IC=0
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
Range
160~320
BTD882NUJ3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
