Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
CYStech Electronics Corp.
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
VEBO
250
250
10
V
V
V
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
IC
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
15
2
60
Power Dissipation
W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
62.5
°C/W
°C/W
°C
RθJC
2.08
Tj
150
Storage Temperature
Tstg
-55~+150
°C
Note : *1. Single Pulse Pw=100ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
ICEO
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
IC=100µA, IE=0
250
-
V
IC=1mA, IB=0
-
100
100
5
µA
µA
mA
mV
V
VCE=250V, IE=0
VCB=250V, IE=0
VEB=5V, IC=0
ICBO
-
IEBO
-
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
1
-
780
1.4
1.3
1.2
1.1
2
IC=200mA, IB=300uA
IC=10A, IB=250mA
IC=7A, IB=50mA
IC=5A, IB=20mA
IC=4A, IB=5mA
IC=8A, IB=15mA
VCE=4V, IC=8A
VCE=10V, IC=5A
2
3
4
5
-
-
V
-
V
-
V
*VBE(sat)
*VBE(on)
*hFE
-
-
V
1.8
-
V
1000
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTD5510F3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
