Spec. No. : C211M3
Issued Date : 2018.06.28
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
400
400
6
300
1
200
V
V
V
mA
A
mA
0.6
Power Dissipation
PD
1
2
*1
*2
W
Operating Junction Temperature Range
Storage Temperature Range
Tj
Tstg
-55~+150
-55~+150
C
C
Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm.
*2 When mounted on a 40*40*0.7mm ceramic board.
Characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=400V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
400
400
6
-
-
-
-
-
-
160
150
75
50
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
mV
mV
mV
mV
-
100
100
200
300
900
1200
320
-
IEBO
VEB=6V, IC=0
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
70
94
668
744
-
-
-
-
3.8
IC=20mA, IB=2mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f =100MHz
VCB=10V, f=1MHz
-
-
-
-
-
MHz
pF
Cob
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD2568M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
