CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C223N3
Issued Date : 2003.05.26
Revised Date : 2005.06.28
Page No. : 1/4
BTD2444N3
Features
•
The BTD2444N3 is designed for general purpose low frequency power amplifier applications.
•
Low V
CE
(sat), V
CE
(sat)=40mV (typical), at I
C
/ I
B
= 50mA / 2.5mA
•
Complementary to BTB1590N3
•
Pb-free package
Symbol
BTD2444N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
40
25
6
800
1.5
(Note)
225
150
-55~+150
Unit
V
V
V
mA
A
mW
°C
°C
BTD2444N3
CYStek Product Specification