Spec. No. : C848L3
Issued Date : 2004.10.07
Revised Date : 2204.11.15
Page No. : 2/4
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
40
30
5
-
-
V
IC=50µA, IE=0
-
-
V
IC=1mA, IB=0
-
-
-
V
IE=50µA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
-
100
100
0.5
1.5
-
nA
nA
V
IEBO
-
-
0.25
-
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
-
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=0.1A
VCE=3V, IC=1A
-
V
52
82
50
-
-
-
-
560
-
-
-
-
-
-
90
45
MHz
pF
VCE=5V, IC=0.1A, f =100MHz
VCB=10V, f=1MHz
Cob
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
Q
R
S
Range
82~180
120~270
180~390
270~560
Characteristic Curves
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
140
120
100
80
700
600
500
400
300
200
100
0
500uA
400uA
2.5mA
2mA
300uA
1.5mA
1mA
60
200uA
100uA
40
500uA
20
IB=0uA
IB=0uA
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
BTD2150L3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
