CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848E3
Issued Date : 2004.07.06
Revised Date :
Page No. : 1/5
BTD2150AE3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 50mA
•
Excellent current gain characteristics
•
Complementary to BTB1424AE3
Symbol
BTD2150AE3
Outline
TO-220AB
B:Base
C:Collector
E:Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
Tj
Tstg
Limits
80
50
6
3
7
(Note)
1
1.8
25
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
BTD2150AE3
CYStek Product Specification