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BTD1816I3 参数 Datasheet PDF下载

BTD1816I3图片预览
型号: BTD1816I3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 233 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTD1816I3的Datasheet PDF文件第1页浏览型号BTD1816I3的Datasheet PDF文件第2页浏览型号BTD1816I3的Datasheet PDF文件第4页浏览型号BTD1816I3的Datasheet PDF文件第5页浏览型号BTD1816I3的Datasheet PDF文件第6页  
Spec. No. : C821I3  
Issued Date : 2005.10.05  
Revised Date :2009.02.04  
Page No. : 3/6  
CYStech Electronics Corp.  
Characteristic Curves  
Current Gain vs Collector Current  
Saturation Voltage vs Collector Current  
1000  
10000  
1000  
100  
VCE(SAT)  
VCE=5V  
VCE=2V  
100  
IC=20IB  
IC=50IB  
IC=100IB  
VCE=1V  
10  
10  
1
10  
100  
1000  
10000  
1
1
0
10  
100  
1000  
10000  
10000  
10  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Saturation Voltage vs Collector Current  
On Vottage vs Collector Current  
10000  
1000  
VBE(SAT) @ IC=10IB  
VBE(ON)@VCE=5V  
1000  
100  
100  
10  
100  
1000  
1
10  
100  
1000  
10000  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Grounded Emitter Output Characteristics  
Grounded Emitter Output Characteristics  
3.5  
3
8
7
6
5
4
3
2
1
0
IB=8mA  
IB=80mA IB=90mA IB=40mA  
IB=60mA  
IB=100mA  
IB=70mA  
2.5  
2
IB=50mA  
IB=5mA  
IB=30mA  
IB=20mA  
1.5  
1
IB=10mA  
IB=7mA  
IB=5mA  
IB=1mA  
IB=0mA  
0.5  
0
IB=2mA  
IB=0mA  
2
4
Collector-to-Emitter Voltage---VCE(V)  
6
8
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)  
BTD1816I3  
CYStek Product Specification