Spec. No. : C820FP
Issued Date : 2005.03.29
Revised Date :2005.07.26
Page No. : 2/ 4
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
VCBO
VCEO
VEBO
IC
150
V
V
V
60
7
5
A
A
ICP
10 (Note 1)
IB
2
2
PD
W
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
PD
RθJA
RθJC
Tj
40
62.5
°C/W
°C/W
°C
3.125
150
Storage Temperature
Tstg
-55~+150
°C
≦
≦
Note : 1. Single Pulse , Pw 380µs,Duty 2%.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
*BVCEO
BVEBO
ICBO
150
-
-
V
IC=100µA, IE=0
60
-
-
V
IC=1mA, IB=0
7
-
-
V
IC=100µA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
-
-
0.1
0.1
50
300
400
600
1.2
400
-
µA
µA
mV
mV
mV
mV
V
IEBO
-
-
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
1
-
-
IC=100mA, IB=5mA
IC=2A, IB=50mA
IC=3A, IB=150mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=2V, IC=5A
2
3
4
-
200
240
-
-
-
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
-
0.9
-
-
-
200
85
20
-
-
-
-
-
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
150
50
50
1.35
120
-
MHz
pF
ns
Cob
ton
-
-
-
-
VCC=30V, IC=10IB1=-10IB2=1A,
tstg
-
-
µs
ns
Ω
RL=30
tf
-
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTD1805FP
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
